Document
Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
•
Low rDS(on) provides higher efficiency and extends battery life
G1
• Low thermal impedance copper leadframe S1
SOIC-8 saves board space
S2
• Fast switching speed
G2
• High performance trench technology
AM4962NE
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
60 35 @ VGS = 10V 45 @ VGS = 4.5V
ID (A) ±6.4
±5.6
SOIC-8 Top View
D1 D2
1
8 D1 G1
G2
2 7 D1
3 4
6 5
D2 D2
N-ChaSn1nel N-ChaSn2nel
MOSFET MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
.