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AM4962NE Dataheets PDF



Part Number AM4962NE
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM4962NE DatasheetAM4962NE Datasheet (PDF)

Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) provides higher efficiency and extends battery life G1 • Low thermal impedance copper leadframe S1 S.

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Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) provides higher efficiency and extends battery life G1 • Low thermal impedance copper leadframe S1 SOIC-8 saves board space S2 • Fast switching speed G2 • High performance trench technology AM4962NE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 35 @ VGS = 10V 45 @ VGS = 4.5V ID (A) ±6.4 ±5.6 SOIC-8 Top View D1 D2 1 8 D1 G1 G2 2 7 D1 3 4 6 5 D2 D2 N-ChaSn1nel N-ChaSn2nel MOSFET MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb .


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