Document
Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOIC-8 saves board space
• Fast switching speed • High performance trench technology
AM4998N
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30
32 @ VGS = 4.5V 40 @ VGS = 2.5V
1 2 3 4
ID (A) 6.5 5.8
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
30 ±12 6.5 ±5.3 ±50
Continuous Source Current (Diode Conduction)a
IS 2.3
Power.