AM6612N

Analog Power N-Channel 30-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AM6612N VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 22 @ VGS = 10V 30 @ VGS = 4.5V ID(A) 9.7 8.3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 9.7 8.2 30 4.1 Power Dissipation a TA=25°C TA=70°C PD 3.1 2.2 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 40 80 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limite...