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AM4938NE Datasheet, Equivalent, N-Channel MOSFET.Dual N-Channel MOSFET Dual N-Channel MOSFET |
| Part | AM4938NE |
|---|---|
| Description | Dual N-Channel MOSFET |
| Feature | Analog Power
AM4938NE
Dual N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 34 @ VGS = 10V 42 @ VGS = 4.5V ID (A) 6.5 5.8 SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 6.5 5.1 25. |
| Manufacture | Analog Power |
| Datasheet |
| Part | AM4938NE |
|---|---|
| Description | Dual N-Channel MOSFET |
| Feature | Analog Power
AM4938NE
Dual N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 34 @ VGS = 10V 42 @ VGS = 4.5V ID (A) 6.5 5.8 SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 6.5 5.1 25. |
| Manufacture | Analog Power |
| Datasheet |
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