AM4966N

Analog Power AM4966N Dual N-Channel 60-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: DC/DC Conversion Circuits Motor Drives VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 28 @ VGS = 10V 34 @ VGS = 4.5V ID (A) 7.1 6.5 SO-8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 7.1 5.6 30 2.8 Power Dissipation a TA=25°C TA=70°C PD 2.1 1.3 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 62.5 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperatur...