Analog Power
AM4512CE
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
PRODUCT SUMMARY
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
VDS (V)
30
rDS(on) m(Ω)
40 @ VGS = 4.5V
31 @ VGS = 10V
ID (A)
6.0
6.9
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
-30 80 @ VGS = -4.5V -4.2
52 @ VGS = -10V
-5.2
SOIC-8
Top View
D1
S2
SOIC-8 saves board space
S1 1
G1 2
• Fast switching speed
S2 3
• High performance trench technology ESD ProtectedG2 4
8
7
D1
D1
G1
6 D2
5 D2
S1
N-Channel MOSFET
G2
P-ChanneDl M2 OSFET
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
30 -30 V
±20 ±20
6.9 -5.2
5.4 -6.8 A
20 -20
Continuous Source Current (Diode Conduction)a
IS
1.3 -1.3 A
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
2.1 2.1
1.3 1.3
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
40
60
Units
oC/W
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM4512CE_A
