Document
Analog Power
AM4520H
P & N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
VDS (V) 20
-20
PRODUCT SUMMARY rDS(on) (mΩ)
47 @ VGS = 4.5V 55 @ VGS = 2.5V 79 @ VGS = -4.5V 110 @ VGS = -2.5V
ID(A) 6.6 6.2 -5.2 -4.4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
Drain-Source Voltage
VDS 20 -20
Gate-Source Voltage
VGS ±8
±8
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
6.6 -5.2 5 -3.8 20 -20 2.2 -2.2
Power Dissipation a
TA=25°C TA=70°C
PD
2.1 1.3
2.1 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maxi.