Document
Analog Power
AM4530C
P & N-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 82 @ VGS = 4.5V 50 @ VGS = 10V
-30 80 @ VGS = -4.5V 52 @ VGS = -10V
ID (A) 4.2 5.3 -4.2 -5.2
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
18 27 36 45
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
30 -30 V ±20.