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AM4530CE Dataheets PDF



Part Number AM4530CE
Manufacturers Analog Power
Logo Analog Power
Description N & P-Channel MOSFET
Datasheet AM4530CE DatasheetAM4530CE Datasheet (PDF)

Analog Power AM4530CE P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 82 @ VGS = 4.5V 50 @ VGS = 10V -30 80 @ VGS = -4.5V 52 @ V.

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Analog Power AM4530CE P & N-Channel 32-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 30 82 @ VGS = 4.5V 50 @ VGS = 10V -30 80 @ VGS = -4.5V 52 @ VGS = -10V ID (A) 4.2 5.3 -4.2 -5.2 SOIC-8 D1 S2 • Low rDS(on) provides higher efficiency and Top View extends battery life • Low thermal impedance copper leadframe S1 1 G1 2 S2 3 8 7 D1 D1 G1 6 D2 G2 SOIC-8 saves board space • Fast switching speed ESD ProtectedG2 4 5 D2 S1 N-Channel MOSFET P-ChanneDl M2 OSFET • High performance trench technology 2000V ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol N-Channel P-Channel Units Drain.


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