Document
Analog Power
AM4530CE
P & N-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 82 @ VGS = 4.5V 50 @ VGS = 10V
-30 80 @ VGS = -4.5V 52 @ VGS = -10V
ID (A) 4.2 5.3 -4.2 -5.2
SOIC-8
D1
S2
• Low rDS(on) provides higher efficiency and
Top View
extends battery life • Low thermal impedance copper leadframe
S1 1 G1 2
S2 3
8 7
D1 D1
G1
6 D2
G2
SOIC-8 saves board space • Fast switching speed
ESD ProtectedG2 4
5 D2
S1
N-Channel MOSFET
P-ChanneDl M2 OSFET
• High performance trench technology
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain.