Document
Analog Power
P-Channel 150-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM7401P
VDS (V) -150
PRODUCT SUMMARY rDS(on) (mΩ)
140 @ VGS = -10V 150 @ VGS = -5.5V
ID(A) -4.9 -4.8
DFN5X6-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -150
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
-4.9 -4 -50 -6.5
Power Dissipation a
TA=25°C TA=70°C
PD
5 3.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
25 65
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board..