Document
Analog Power
P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe SOIC-8PP saves board space
• Fast switching speed • High performance trench technology
AM7461P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-60 45 @VGS= -10V 60 @VGS= -4.5V
SOIC-8PP Top View
ID (A) -10 -8
S
S1 S2 S3 G4
8D
G
7D
6D
5
D
D P-Channel MOSFET
ABSOLUTEMAXIMUMRATINGS (TA = 25 oC UNLESS OTHERWISENOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC TA=70oC
ID
IDM
-60 ±20
V
-10 -8 A
.