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AM7962N Datasheet, Equivalent, N-Channel MOSFET.Dual N-Channel MOSFET Dual N-Channel MOSFET |
 
 
 
Part | AM7962N |
---|---|
Description | Dual N-Channel MOSFET |
Feature | Analog Power
AM7962N
Dual N-Channel 60 -V (D-S) MOSFET
Key Features: • Low r DS(on) trench technology • Low therma l impedance • Fast switching speed Ty pical Applications: • DC/DC Conversio n Circuits • Motor Drives VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 23 @ VG S = 10V 28 @ VGS = 4. 5V ID (A) 8. 6 7. 8 DFN5X6-8L ABSOLUTE MAXIMUM RATINGS ( TA = 25°C UNLESS OTHERWISE NOTED) Par ameter Symbol Limit Drain-Source Volt age VDS 60 Gate-Source Voltage VGS  ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Curre nt (Diode Conduction) a TA=25°C TA=70 °C ID IDM IS 8. 6 6. 9 30 3. . |
Manufacture | Analog Power |
Datasheet |
Part | AM7962N |
---|---|
Description | Dual N-Channel MOSFET |
Feature | Analog Power
AM7962N
Dual N-Channel 60 -V (D-S) MOSFET
Key Features: • Low r DS(on) trench technology • Low therma l impedance • Fast switching speed Ty pical Applications: • DC/DC Conversio n Circuits • Motor Drives VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 23 @ VG S = 10V 28 @ VGS = 4. 5V ID (A) 8. 6 7. 8 DFN5X6-8L ABSOLUTE MAXIMUM RATINGS ( TA = 25°C UNLESS OTHERWISE NOTED) Par ameter Symbol Limit Drain-Source Volt age VDS 60 Gate-Source Voltage VGS  ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Curre nt (Diode Conduction) a TA=25°C TA=70 °C ID IDM IS 8. 6 6. 9 30 3. . |
Manufacture | Analog Power |
Datasheet |
 
 
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