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AM30N06-65DA Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | AM30N06-65DA |
|---|---|
| Description | N-Channel MOSFET |
| Feature | Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM30N06-65DA VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 65 @ VGS = 10V 78 @ VGS = 4. 5V ID (A) 23 21 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C T. |
| Manufacture | Analog Power |
| Datasheet |
| Part | AM30N06-65DA |
|---|---|
| Description | N-Channel MOSFET |
| Feature | Analog Power
N-Channel 60-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools AM30N06-65DA VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 65 @ VGS = 10V 78 @ VGS = 4. 5V ID (A) 23 21 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C T. |
| Manufacture | Analog Power |
| Datasheet |
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