AM30N06-39IE

Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DPAK saves board space Fast switching speed High performance trench technology AM30N06-39IE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 38 @ VGS = 10V 50 @ VGS = 4.5V ID (A) 30 26 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TC=25oC ID IDM 60 V ±20 19 A 40 Continuous Source Current (Diode Conduction)a IS 30 A Power Dissipationa Operating Ju...