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AM30N06-39IE Dataheets PDF



Part Number AM30N06-39IE
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM30N06-39IE DatasheetAM30N06-39IE Datasheet (PDF)

Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe DPAK saves b.

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Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe DPAK saves board space • Fast switching speed • High performance trench technology AM30N06-39IE PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 38 @ VGS = 10V 50 @ VGS = 4.5V ID (A) 30 26 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VDS VGS TC=25oC ID IDM 60 V ±20 19 A 40 Continuous Source Current (Diode Conduction)a IS 30 A Power Dissipationa Operating Ju.


AM30N06-65DA AM30N06-39IE AM30N06-39D


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