Document
Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life
• Low thermal impedance copper leadframe DPAK saves board space
• Fast switching speed • High performance trench technology
AM30N06-39IE
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
60 38 @ VGS = 10V 50 @ VGS = 4.5V
ID (A) 30
26
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb
VDS VGS TC=25oC ID IDM
60 V ±20 19 A 40
Continuous Source Current (Diode Conduction)a
IS 30 A
Power Dissipationa Operating Ju.