AM30N06-39D

Analog Power N-Channel 60-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters AM30N06-39D VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 38 @ VGS = 10V 50 @ VGS = 4.5V ID(A) 30 26 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current b TC=25°C ID IDM 30 100 Continuous Source Current (Diode Conduction) IS 30 Power Dissipation TC=25°C PD 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copp...