Document
Analog Power
N-Channel 40-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
AM70N04-06D
VDS (V) 40
PRODUCT SUMMARY rDS(on) (mΩ)
6 @ VGS = 10V 8 @ VGS = 4.5V
ID(A) 75 65
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 40
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TA=25°C TA=25°C
VGS ID IDM IS PD
±20 75 300 56 50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 40 3
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperat.