N-channel MOSFET
STB155N3H6 STD155N3H6
N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET
Features
Order co...
Description
STB155N3H6 STD155N3H6
N-channel 30 V, 2.5 mΩ , 80 A, D²PAK, DPAK STripFET™ VI DeepGATE™ Power MOSFET
Features
Order codes STB155N3H6 STD155N3H6
VDSS 30 V 30 V
RDS(on) max < 3 mΩ < 3 mΩ
ID 80 A (1) 80 A (1)
1. Limited by wire bonding
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness
Application
■ Switching applications ■ Automotive
Description
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
3 1
DPAK
3 1
D²PAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary Order codes STB155N3H6 STD155N3H6
Marking 155N3H6
S(3)
AM01474v1
Package D²PAK DPAK
Packaging Tape and reel
May 2011
Doc ID 018793 Rev 2
1/
www.st.com
18
Contents
Contents
STB155N3H6, STD155N3H6
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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