S6NF20V

STS6NF20V Datasheet N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D Ultra low threshold gate drive 100% avalanche tested Low gate charge Applications Switching applications S 3 G 4 6 D D 5 Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. SC12830N Product status link STS6NF20V Product summary Order code STS6NF20V Marking 6F20V- Package SO-8 Packing Tape and reel DS2184 - Rev 5 - November 2020 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at Tamb = 25 °C ID Drain current (continuous) at Tamb = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at Tamb = 25 °C Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. Symbol Rthj-amb Table 2. Thermal data Parameter T...