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S6NF20V Dataheets PDF



Part Number S6NF20V
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel MOSFET
Datasheet S6NF20V DatasheetS6NF20V Datasheet (PDF)

STS6NF20V Datasheet N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D • Ultra low threshold gate drive • 100% avalanche tested • Low gate charge Applications • Switching applications S 3 G 4 6 D D 5 Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically.

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STS6NF20V Datasheet N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D • Ultra low threshold gate drive • 100% avalanche tested • Low gate charge Applications • Switching applications S 3 G 4 6 D D 5 Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. SC12830N Product status link STS6NF20V Product summary Order code STS6NF20V Marking 6F20V- Package SO-8 Packing Tape and reel DS2184 - Rev 5 - November 2020 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at Tamb = 25 °C ID Drain current (continuous) at Tamb = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at Tamb = 25 °C Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. Symbol Rthj-amb Table 2. Thermal data Parameter Thermal resistance junction-ambient STS6NF20V Electrical ratings Value Unit 20 V ±12 V 6 A 3.8 A 24 A 2.5 W °C -55 to 150 °C Value 50 Unit °C/W DS2184 - Rev 5 page 2/15 STS6NF20V Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. On-/off-states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA VGS = 0 V, VDS = 20 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 20 V TC = 125 °C (1) IGSS Gate body leakage current VDS = 0 V, VGS = ±12 V VGS(th) Gate threshold voltage VDD = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 4.5 V, ID = 3 A VGS = 2.7 V, ID = 3 A VGS = 1.95 V, ID = 0.9 A 1. Defined by design, not subject to production test. Symbol gfs Ciss Coss Crss Qg Qgs Qgd Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Table 4. Dynamic Test conditions VDS = 15 V, f = 1 MHz, VGS = 0 V VDD = 16 V, ID = 6 A VGS = 0 to 4.5 V (see Figure 12. Test circuit for gate charge behavior) Min. Typ. Max. Unit 20 V 1 µA 10 µA ±100 nA 0.6 V 30 40 37 45 mΩ 90 Min. Typ. Max. Unit 6.5 10 15 S 320 460 640 pF 130 200 280 pF 33 50 68 pF 5.5 8.5 11.5 nC 1.2 1.8 2.5 nC 1.6 2.4 3.4 nC Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 5. Switching times Test conditions VDD = 10 V, ID = 3 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 11. Test circuit for resistive load switching times and Figure 16. Switching time waveform) Min. Typ. Max. Unit - 7 20 ns - 33 45 ns - 27 40 ns - 10 20 ns DS2184 - Rev 5 page 3/15 STS6NF20V Electrical characteristics Table 6. Source-drain diode Symbol Parameter Test conditions ISD ISDM(1) VSD(2) trr Qrr IRRM Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6 A, VGS = 0 V ISD = 6 A, di/dt = 100 A/µs, VDD = 10 V, TJ = 150 °C (see Figure 16. Switching time waveform) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Min. Typ. Max. Unit - 6 A - 24 A - 1.5 V - 26 ns - 13 nC - 1 A DS2184 - Rev 5 page 4/15 2.1 Electrical characteristics (curves) Figure 1. Safe operating area STS6NF20V Electrical characteristics (curves) Figure 2. Thermal impedance Zth = k Rthj-amb Figure 3. Output characteristics Figure 4. Transfer characteristics DS2184 - Rev 5 page 5/15 Figure 5. Source-drain diode forward characteristics STS6NF20V Electrical characteristics (curves) Figure 6. Static drain-source on-resistance Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations DS2184 - Rev 5 page 6/15 Figure 9. Normalized gate threshold voltage vs temperature STS6NF20V Electrical characteristics (curves) Figure 10. Normalized on-resistance vs temperature DS2184 - Rev 5 page 7/15 STS6NF20V Test circuits 3 Test circuits Figure 11. Test circuit for resistive load switching times VGS pulse width VD RG RL 2200 3.3 + μF μF VDD D.U.T. AM01468v1 Figure 13. Test circuit for inductive load switching and diode recovery times Figure 12. Test circuit for gate charge behavior VGS pulse width + 2200 μF 1 kΩ 12 V 47 kΩ 100 nF VDD 1 kΩ IG= .


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