Document
STS6NF20V
Datasheet
N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package
5 8
Features
Order code
VDS
RDS(on) max.
ID
4 1
STS6NF20V
40 mΩ (@4.5 V)
20 V
6A
45 mΩ (@2.7 V)
SO-8
1
S
2
S
8
D
7
D
• Ultra low threshold gate drive • 100% avalanche tested • Low gate charge
Applications
• Switching applications
S
3
G
4
6
D
D
5
Description
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
SC12830N
Product status link STS6NF20V
Product summary
Order code
STS6NF20V
Marking
6F20V-
Package
SO-8
Packing
Tape and reel
DS2184 - Rev 5 - November 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at Tamb = 25 °C ID
Drain current (continuous) at Tamb = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at Tamb = 25 °C
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol Rthj-amb
Table 2. Thermal data Parameter Thermal resistance junction-ambient
STS6NF20V
Electrical ratings
Value
Unit
20
V
±12
V
6
A
3.8
A
24
A
2.5
W
°C -55 to 150
°C
Value 50
Unit °C/W
DS2184 - Rev 5
page 2/15
STS6NF20V
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. On-/off-states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage VGS = 0 V, ID = 250 μA
VGS = 0 V, VDS = 20 V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 20 V TC = 125 °C (1)
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±12 V
VGS(th)
Gate threshold voltage
VDD = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance
VGS = 4.5 V, ID = 3 A VGS = 2.7 V, ID = 3 A VGS = 1.95 V, ID = 0.9 A
1. Defined by design, not subject to production test.
Symbol gfs Ciss Coss Crss Qg Qgs
Qgd
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge
Gate-drain charge
Table 4. Dynamic Test conditions
VDS = 15 V, f = 1 MHz, VGS = 0 V
VDD = 16 V, ID = 6 A VGS = 0 to 4.5 V (see Figure 12. Test circuit for gate charge behavior)
Min. Typ. Max. Unit
20
V
1
µA
10
µA
±100 nA
0.6
V
30
40
37
45
mΩ
90
Min. Typ. Max. Unit
6.5
10
15
S
320 460 640
pF
130 200 280
pF
33
50
68
pF
5.5
8.5 11.5
nC
1.2
1.8
2.5
nC
1.6
2.4
3.4
nC
Symbol td(on) tr td(off)
tf
Parameter Turn-on delay time Rise time Turn-off delay time
Fall time
Table 5. Switching times
Test conditions
VDD = 10 V, ID = 3 A,
RG = 4.7 Ω, VGS = 4.5 V
(see Figure 11. Test circuit for resistive load switching times and Figure 16. Switching time waveform)
Min. Typ. Max. Unit
-
7
20
ns
-
33
45
ns
-
27
40
ns
-
10
20
ns
DS2184 - Rev 5
page 3/15
STS6NF20V
Electrical characteristics
Table 6. Source-drain diode
Symbol
Parameter
Test conditions
ISD ISDM(1) VSD(2)
trr Qrr
IRRM
Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 6 A, VGS = 0 V
ISD = 6 A, di/dt = 100 A/µs, VDD = 10 V, TJ = 150 °C (see Figure 16. Switching time waveform)
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
6
A
-
24
A
-
1.5
V
-
26
ns
-
13
nC
-
1
A
DS2184 - Rev 5
page 4/15
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
STS6NF20V
Electrical characteristics (curves)
Figure 2. Thermal impedance Zth = k Rthj-amb
Figure 3. Output characteristics
Figure 4. Transfer characteristics
DS2184 - Rev 5
page 5/15
Figure 5. Source-drain diode forward characteristics
STS6NF20V
Electrical characteristics (curves)
Figure 6. Static drain-source on-resistance
Figure 7. Gate charge vs gate-source voltage
Figure 8. Capacitance variations
DS2184 - Rev 5
page 6/15
Figure 9. Normalized gate threshold voltage vs temperature
STS6NF20V
Electrical characteristics (curves)
Figure 10. Normalized on-resistance vs temperature
DS2184 - Rev 5
page 7/15
STS6NF20V
Test circuits
3
Test circuits
Figure 11. Test circuit for resistive load switching times
VGS
pulse width
VD RG
RL
2200
3.3
+ μF
μF
VDD
D.U.T.
AM01468v1
Figure 13. Test circuit for inductive load switching and diode recovery times
Figure 12. Test circuit for gate charge behavior
VGS
pulse width
+
2200 μF
1 kΩ
12 V
47 kΩ 100 nF
VDD 1 kΩ
IG= .