N-channel MOSFET
STP160N3LL
N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package
Datasheet - production data...
Description
STP160N3LL
N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS RDS(on) max.
ID
PTOT
STP160N3LL 30 V 3.2 mΩ 120 A 136 W
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STP160N3LL
Table 1: Device summary
Marking
Package
160N3LL
TO-220
Packing Tube
June 2015
DocID025073 Rev 3
This is information on a product in full production.
1/13
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Contents
Contents
STP160N3LL
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ......................................
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