96N3LLH6

STD96N3LLH6 N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications – Automotive Description This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STD96N3LLH6 Marking 96N3LLH6 S(3) AM01474v1 Package DPAK Packaging Tape and reel January 2011 Doc ID 18432 Rev 1 1/15 www.st.com 15 Contents Contents STD96N3LLH6 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Elect...