Document
STL90N3LLH6
N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package
Datasheet - production data
Features
1 2 3 4
PowerFLAT™5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
Order code STL90N3LLH6
VDS 30 V
RDS(on) max. 0.0045 Ω
ID
24 A
(1)
1. The value is rated according Rthj-pcb
• RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses • Very low switching gate charge
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET G(4) developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
12 34
S(1, 2, 3)
Top View
AM15540v2
Order code STL90N3LLH6
Table 1. Device summary
Marking
Packages
90N3LLH6
PowerFLAT™ 5x6
Packaging Tape and reel
September 2013
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