90N3LLH6

STL90N3LLH6 N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 3 4 PowerFLAT™5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 Order code STL90N3LLH6 VDS 30 V RDS(on) max. 0.0045 Ω ID 24 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Applications Switching applications Description This device is an N-channel Power MOSFET G(4) developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 12 34 S(1, 2, 3) Top View AM15540v2 Order code STL90N3LLH6 Table 1. Device summary Marking Packages 90N3LLH6 PowerFLAT™ 5x6 Packaging Tape and reel September 2013 This is information on ...