N-channel MOSFET
STL65DN3LLH5
Dual N-channel 30 V, 0.0059 Ω, 19 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET
Features
Type...
Description
STL65DN3LLH5
Dual N-channel 30 V, 0.0059 Ω, 19 A PowerFLAT™(5x6) double island, STripFET™ V Power MOSFET
Features
Type STL65DN3LLH5
VDSS 30 V
RDS(on) max
<0.0065 Ω
ID 19 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.
PowerFLAT™ (5x6) Double island
Figure 1. Internal schematic diagram
Table 1. Device summary Order code
Marking
STL65DN3LLH5
65DN3LLH5
Package
PowerFLAT™(5x6) Double island
Packaging Tape and reel
December 2010
Doc ID 18323 Rev 1
1/12
www.st.com
1...
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