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11NM60N Datasheet, Equivalent, Power MOSFET.N-CHANNEL Power MOSFET N-CHANNEL Power MOSFET |
| Part | 11NM60N |
|---|---|
| Description | N-CHANNEL Power MOSFET |
| Feature | STx11NM60N
N-channel 600 V, 0. 37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO -220FP, I2PAK, IPAK, DPAK, D2PAK Featu res Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF1 1NM60N STP11NM60N 650 V 650 V 650 V 65 0 V 650 V 650 V RDS(on) max 0. 45 Ω 0 . 45 Ω 0. 45 Ω 0. 45 Ω 0. 45 Ω 0. 45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperat ure allowed ■ 100% avalanche tested ■ Low input capacitance and gate char ge ■ Low gate input resistance Appli cation ■ Switching applications Des cription This series of devices is des igned using the second generation of M . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | 11NM60N |
|---|---|
| Description | N-CHANNEL Power MOSFET |
| Feature | STx11NM60N
N-channel 600 V, 0. 37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO -220FP, I2PAK, IPAK, DPAK, D2PAK Featu res Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF1 1NM60N STP11NM60N 650 V 650 V 650 V 65 0 V 650 V 650 V RDS(on) max 0. 45 Ω 0 . 45 Ω 0. 45 Ω 0. 45 Ω 0. 45 Ω 0. 45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperat ure allowed ■ 100% avalanche tested ■ Low input capacitance and gate char ge ■ Low gate input resistance Appli cation ■ Switching applications Des cription This series of devices is des igned using the second generation of M . |
| Manufacture | STMicroelectronics |
| Datasheet |
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