N-CHANNEL Power MOSFET
STx11NM60N
N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
Features
T...
Description
STx11NM60N
N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
Features
Type
VDSS (@TJmax)
STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N
650 V 650 V 650 V 650 V 650 V 650 V
RDS(on) max
0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω
ID
10 A 10 A 10 A 10 A 10 A(1) 10 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
3 2 1
TO-220
3 1
DPAK
3 2 1
IPAK
123
I²PAK
3 1
D²PAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagr...
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