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D11NM60N Dataheets PDF



Part Number D11NM60N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL Power MOSFET
Datasheet D11NM60N DatasheetD11NM60N Datasheet (PDF)

STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Swit.

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STx11NM60N N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK 123 I²PAK 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagr.


11NM60N D11NM60N P11NM60N


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