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STB11NM60T4 Dataheets PDF



Part Number STB11NM60T4
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL Power MOSFET
Datasheet STB11NM60T4 DatasheetSTB11NM60T4 Datasheet (PDF)

STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applications • Switching applications Description These devices are N-channel Power MOS.

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STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 packages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_noZen Features Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB11NM60T4 STP11NM60 Product summary Order code STB11NM60T4 Marking B11NM60 Package D²PAK Packing Tape and reel Order code STP11NM60 Markin.


P11NM60N STB11NM60T4 B11NM60


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