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B11NM60 Datasheet, Equivalent, Power MOSFET.N-CHANNEL Power MOSFET N-CHANNEL Power MOSFET |
| Part | B11NM60 |
|---|---|
| Description | N-CHANNEL Power MOSFET |
| Feature | STB11NM60T4, STP11NM60
Datasheet
N-chann el 600 V, 0. 4 Ω typ. , 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 p ackages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_no Zen Features Order codes VDSS (@ TJm ax) RDS(on) max. STB11NM60T4 STP11NM6 0 650 V 0. 45 Ω • 100% avalanche t ested • Low input capacitance and gat e charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applic ations • Switching applications Desc ription These devices are N-channel Pow er MOSFETs developed using the second g eneration of MDmesh™ technology. Thes e revolutionary Power MOSFETs . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | B11NM60 |
|---|---|
| Description | N-CHANNEL Power MOSFET |
| Feature | STB11NM60T4, STP11NM60
Datasheet
N-chann el 600 V, 0. 4 Ω typ. , 11 A, MDmesh™ II Power MOSFETs in D²PAK and TO-220 p ackages TAB TAB 3 1 D2PAK TO-220 1 23 D(2, TAB) G(1) S(3) AM01475v1_no Zen Features Order codes VDSS (@ TJm ax) RDS(on) max. STB11NM60T4 STP11NM6 0 650 V 0. 45 Ω • 100% avalanche t ested • Low input capacitance and gat e charge • Low gate input resistance ID 11 A Package D²PAK TO-220 Applic ations • Switching applications Desc ription These devices are N-channel Pow er MOSFETs developed using the second g eneration of MDmesh™ technology. Thes e revolutionary Power MOSFETs . |
| Manufacture | STMicroelectronics |
| Datasheet |
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