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FDD8870_F085 Datasheet, Equivalent, PowerTrench MOSFET.N-Channel PowerTrench MOSFET N-Channel PowerTrench MOSFET |
　
　
　
| Part | FDD8870_F085 |
|---|---|
| Description | N-Channel PowerTrench MOSFET |
| Feature | FDD8870_F085 N-Channel PowerTrench®MOSF ET
FDD8870_F085
N-Channel PowerTrench ® MOSFET 30V, 160A, 3. 9mΩ General Desc ription This N-Channel MOSFET has been designed specifically to improve the ov erall efficiency of DC/DC converters us ing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS( ON) and fast switching speed. Applicati ons • DC/DC converters Jan 2013 Feat ures • rDS(ON) = 3. 9mΩ, VGS = 10V, I D = 35A • rDS(ON) = 4. 4mΩ, VGS = 4. 5 V, ID = 35A • High performance trench technology for extremely low rDS(ON) â €¢ Low gate charge • High pow . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
| Part | FDD8870_F085 |
|---|---|
| Description | N-Channel PowerTrench MOSFET |
| Feature | FDD8870_F085 N-Channel PowerTrench®MOSF ET
FDD8870_F085
N-Channel PowerTrench ® MOSFET 30V, 160A, 3. 9mΩ General Desc ription This N-Channel MOSFET has been designed specifically to improve the ov erall efficiency of DC/DC converters us ing either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS( ON) and fast switching speed. Applicati ons • DC/DC converters Jan 2013 Feat ures • rDS(ON) = 3. 9mΩ, VGS = 10V, I D = 35A • rDS(ON) = 4. 4mΩ, VGS = 4. 5 V, ID = 35A • High performance trench technology for extremely low rDS(ON) â €¢ Low gate charge • High pow . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
　
　
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