Taiwan Goodark Technology Co.,Ltd
TGD40H12K
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
● High density ...
