40H12K Datasheet: N-Channel Enhancement Mode Power MOSFET





40H12K N-Channel Enhancement Mode Power MOSFET Datasheet

Part Number 40H12K
Description N-Channel Enhancement Mode Power MOSFET
Manufacture TGD
Total Page 6 Pages
PDF Download Download 40H12K Datasheet PDF

Features: Taiwan Goodark Technology Co.,Ltd TGD40H 12K TGD N-Channel Enhancement Mode Powe r MOSFET Description The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low g ate charge. It can be used in a wide va riety of applications. General Feature s ● VDS =40V,ID =120A RDS(ON) <4.0mβ„ ¦ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V β — High density cell design for ultra l ow Rdson ● Fully characterized avalan che voltage and current ● Good stabil ity and uniformity with high EAS ● Ex cellent package for good heat dissipati on ● Special process technology for h igh ESD capability Schematic diagram Application ● Load switching ● Hard switched and high frequency circuits β — Uninterruptible power supply pin as signment 100% UIS TESTED! 100% βˆ†Vds TESTED! TO-252-2L top view Package Ma rking and Ordering Information Device Marking Device Device Package 40H12K 40H12K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless o.

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Taiwan Goodark Technology Co.,Ltd
TGD40H12K
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD40H12K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =40V,ID =120A
RDS(ON) <4.0mΩ @ VGS=10V
RDS(ON) <7mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
pin assignment
100% UIS TESTED!
100% βˆ†Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
40H12K
40H12K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
40
Β±20
120
85
330
120
0.8
1080
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
http://www.goodark.asia

                 






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