N-Channel Enhancement Mode Power MOSFET
Taiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD30H10K uses advanced tr...
Description
Taiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
TGD30H10K
General Features
● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V
(Typ:4mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
30H10K
30H10K
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless...
Similar Datasheet