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30H10K Datasheet, Equivalent, Power MOSFET.N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET |
　
　
　
| Part | 30H10K |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | Taiwan Goodark Technology Co. ,Ltd TGD N- Channel Enhancement Mode Power MOSFET D escription The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge . It can be used in a wide variety of a pplications. TGD30H10K General Featur es • VDS =30V,ID =100A RDS(ON) <5. 5mâ „¦ @ VGS=10V (Typ:4mΩ) • High den sity cell design for ultra low Rdson â— Fully characterized avalanche voltage and current • Good stability and uni formity with high EAS • Excellent pac kage for good heat dissipation • Spec ial process technology for high ESD cap ability Schematic diagram Ap . |
| Manufacture | TGD |
| Datasheet |
| Part | 30H10K |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Feature | Taiwan Goodark Technology Co. ,Ltd TGD N- Channel Enhancement Mode Power MOSFET D escription The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge . It can be used in a wide variety of a pplications. TGD30H10K General Featur es • VDS =30V,ID =100A RDS(ON) <5. 5mâ „¦ @ VGS=10V (Typ:4mΩ) • High den sity cell design for ultra low Rdson â— Fully characterized avalanche voltage and current • Good stability and uni formity with high EAS • Excellent pac kage for good heat dissipation • Spec ial process technology for high ESD cap ability Schematic diagram Ap . |
| Manufacture | TGD |
| Datasheet |
　
　
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