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30H10K Datasheet, Equivalent, Power MOSFET.

N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET

 

 

 

Part 30H10K
Description N-Channel Enhancement Mode Power MOSFET
Feature Taiwan Goodark Technology Co.
,Ltd TGD N- Channel Enhancement Mode Power MOSFET D escription The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
It can be used in a wide variety of a pplications.
TGD30H10K General Featur es
• VDS =30V,ID =100A RDS(ON) <5.
5m⠄¦ @ VGS=10V (Typ:4mΩ)
• High den sity cell design for ultra low Rdson ◠ Fully characterized avalanche voltage and current
• Good stability and uni formity with high EAS
• Excellent pac kage for good heat dissipation
• Spec ial process technology for high ESD cap ability Schematic diagram Ap .
Manufacture TGD
Datasheet
Download 30H10K Datasheet
Part 30H10K
Description N-Channel Enhancement Mode Power MOSFET
Feature Taiwan Goodark Technology Co.
,Ltd TGD N- Channel Enhancement Mode Power MOSFET D escription The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
It can be used in a wide variety of a pplications.
TGD30H10K General Featur es
• VDS =30V,ID =100A RDS(ON) <5.
5m⠄¦ @ VGS=10V (Typ:4mΩ)
• High den sity cell design for ultra low Rdson ◠ Fully characterized avalanche voltage and current
• Good stability and uni formity with high EAS
• Excellent pac kage for good heat dissipation
• Spec ial process technology for high ESD cap ability Schematic diagram Ap .
Manufacture TGD
Datasheet
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