100A 30V N-channel Enhancement Mode Power MOSFET
30H10I/30H10K
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used a...
Description
30H10I/30H10K
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching ● Low ON Resistance(Rdson≤5.5mΩ) ● Low Gate Charge(Typical:43nC) ● Low Reverse Transfer Capacitance(Typical:215pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
3 Applications
● Power switching applications ● Inverter management system ● Electric Tools ● Automotive Electronics
VDSS = 30V RDS(on) (TYP)= 4mΩ
ID = 100A
TO-252B
TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Maximum Drian-Source DC Voltage Maximum Gate-Drain Voltage
Drain Current(continuous)
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche Energy(Note 5)
Total Dissipation
Ta=25℃ TC=25℃
Junction Temperature
storage Temperature
Maximum ...
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