2A 600V N-channel Enhancement Mode Power MOSFET
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanc...
Description
2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
VDSS = 600V RDS(on) (TYP)= 4.0Ω
ID = 2A
2 Features
● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
TO-220C TO-220F
TO-262
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Drian-Source Voltage Gate-Drain Voltage
Drain Current(continuous)
Drain Current(Pulsed)(Note 1)
Single Pulse Avalanche E...
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