(Datasheet) I2N60 data sheet PDF





I2N60 Datasheet, 2A 600V N-channel Enhancement Mode Power MOSFET

I2N60   I2N60  

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2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 60 0V N-channel Enhancement Mode Power MOS FET 1 Description These N-channel Enha nced VDMOSFETs, is obtained by the self -aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS sta ndard. VDSS = 600V RDS(on) (TYP)= 4. 0Ω ID = 2A 2 Features ● Fast

I2N60 Datasheet, 2A 600V N-channel Enhancement Mode Power MOSFET

I2N60   I2N60  
Switching ● Low ON Resistance(Rdson≤ 4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ: 3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220 C TO-220F TO-262 3 Applications ● u sed in various power switching circuit for system miniaturization and higher e fficiency. ● Power switch circuit of electron ballast and adaptor. 4 Electrical Cha








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