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B2N60 Datasheet, Equivalent, Power MOSFET.

2A 600V N-channel Enhancement Mode Power MOSFET

2A 600V N-channel Enhancement Mode Power MOSFET

 

 

 

Part B2N60
Description 2A 600V N-channel Enhancement Mode Power MOSFET
Feature 2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 60 0V N-channel Enhancement Mode Power MOS FET 1 Description These N-channel Enha nced VDMOSFETs, is obtained by the self -aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS sta ndard.
VDSS = 600V RDS(on) (TYP)= 4.
0Ω ID = 2A 2 Features
• Fast Switch ing
• Low ON Resistance(Rdson≤4.
5Ω )
• Low Gate Charge(Typ:8nC)
• Low Reverse Transfer Capacitances(Typ:3.
8pF )
• 100% Single Pulse Avalanche Energ y Test
• 100% ΔVDS Test TO-220C TO- 220F TO-262 3 Applications
• us .
Manufacture ROUM
Datasheet
Download B2N60 Datasheet
Part B2N60
Description 2A 600V N-channel Enhancement Mode Power MOSFET
Feature 2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 60 0V N-channel Enhancement Mode Power MOS FET 1 Description These N-channel Enha nced VDMOSFETs, is obtained by the self -aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS sta ndard.
VDSS = 600V RDS(on) (TYP)= 4.
0Ω ID = 2A 2 Features
• Fast Switch ing
• Low ON Resistance(Rdson≤4.
5Ω )
• Low Gate Charge(Typ:8nC)
• Low Reverse Transfer Capacitances(Typ:3.
8pF )
• 100% Single Pulse Avalanche Energ y Test
• 100% ΔVDS Test TO-220C TO- 220F TO-262 3 Applications
• us .
Manufacture ROUM
Datasheet
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