B8NE60

8NE60/F8NE60/I8NE60/E8NE60/B8NE60/D8NE60 7.5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.0Ω ID = 7.5A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.3Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of adaptor and charger. TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 8NE60/I8NE60/E8NE60 /B8NE60/D8NE60 Maximum Drian-...