25A 100V N-channel Enhancement Mode Power MOSFET
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10
25A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channe...
Description
25N10/F25N10/I25N10/ E25N10/B25N10/D25N10
25A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching ● Low ON Resistance(Rdson≤36mΩ) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:84pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
3 Applications
● Power switching applications ● LED Boost ● UPS power supply ● Load switch
VDSS = 100V RDS(on) (TYP)= 30mΩ
ID = 25A
TO-220C TO-220F TO-262
TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
25N10/I25N10/E25N10 /B25N10/D25N10
Maximum Drian-Source DC Voltage
VDS
100
Maximum Gate-Drain Voltage
VGS ±20
Drain Current(continuous)
ID(T=25℃) (T=100℃)
30 21
Drain Current(Pulsed)(Note ...
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