5A 600V N-channel Enhancement Mode Power MOSFET
5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanc...
Description
5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
VDSS = 600V RDS(on) (TYP)= 1.4Ω
ID = 5A
2 Features
● Fast Switching ● Low ON Resistance(Rdson≤1.7Ω) ● Low Gate Charge(Typical:19.5nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B
4 Electrical Characteristics
4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
5N60/I5N60/E5N60 /B5N60/D5N60
Drian-Source Voltage
VDS 600
Gate-Drain Voltage
V...
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