I5N60 Datasheet (data sheet) PDF





I5N60 Datasheet, 5A 600V N-channel Enhancement Mode Power MOSFET

I5N60   I5N60  

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5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 60 0V N-channel Enhancement Mode Power MOS FET 1 Description These N-channel Enha nced VDMOSFETs, is obtained by the self -aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS sta ndard. VDSS = 600V RDS(on) (TYP)= 1. 4Ω ID = 5A 2 Features ● Fast Switch ing ● Low ON Resistance(Rdson≤1.7Ω ) ● Low Gate Charge(Typical:19.5nC) Low Reverse Transfer Capacitances(Ty pical:7.5pF) ● 100% Single Pulse Aval anche Energy Test ● 100% ΔVDS Test 3 Applications ● used in various power switching circuit for system miniaturization

I5N60 Datasheet, 5A 600V N-channel Enhancement Mode Power MOSFET

I5N60   I5N60  
and higher efficiency. ● Power switch circuit of electron ballast and adaptor . TO-220C TO-220F TO-262 TO-263 TO-252 B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃, unless otherwise noted) Parameter Sym bol Value 5N60/I5N60/E5N60 /B5N60/D5N6 0 Drian-Source Voltage VDS 600 Gate- Drain Voltage V








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