Document
D7509/FD7509/ID7509/ED7509 80A 75V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
3 Applications
● AC-DC Switching Power ● Pulse Width Modulation Circuit ● Load Switching ● Inverter
VDS = 75V RDS(on) (TYP)= 6.7mΩ
ID = 80A
TO-220C
TO-220F
TO-262
TO-263
4 Electrical Characteristics
4.1 Absolute Maximum Ratings (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Value
D7509/ID7509/ED7509
Drian-Source Voltage
VDS 75
Gate-Source Voltage
VGS ±25
Drain Current(continuous)(Note 3) Drain Current(continuous)(T=100℃)(Note 3)
ID ID(100℃)
80 65
Drain Current(Pulsed)(Note 4)
IDM 320
Avalanche Current(Note 5)
IAS 25
Si.