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35CN10N Dataheets PDF



Part Number 35CN10N
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet 35CN10N Datasheet35CN10N Datasheet (PDF)

IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 .

  35CN10N   35CN10N


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IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Package Marking PG-TO263-3 34CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 35CN10N Value Unit Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=27 A, R GS=25 W Gate source voltage3) V GS Power dissipation P tot T C=2.


33CN10N 35CN10N LQW15AN33NJ00D


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