N-channel Power MOSFET
STL11N3LLH6
N-channel 30 V, 6 mΩ typ., 11 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - produ...
Description
STL11N3LLH6
N-channel 30 V, 6 mΩ typ., 11 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code STL11N3LLH6
VDS 30 V
RDS(on) max 7.5 mΩ
ID 11 A
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(1, 2, 3)
Order code STL11N3LLH6
1234
AM15810v1
Table 1: Device summary
Marking
Package
11N3L
PowerFLATTM 3.3x3.3
Packing Tape and reel
February 2017
DocID17755 Rev 3
This is information on a product in full production.
1/14
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Contents
Contents
STL11N3LLH6
1 Electrical ratings ...................................................................
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