11N3L

STL11N3LLH6 N-channel 30 V, 6 mΩ typ., 11 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Features Order code STL11N3LLH6 VDS 30 V RDS(on) max 7.5 mΩ ID 11 A  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STL11N3LLH6 1234 AM15810v1 Table 1: Device summary Marking Package 11N3L PowerFLATTM 3.3x3.3 Packing Tape and reel February 2017 DocID17755 Rev 3 This is information on a product in full production. 1/14 www.st.com Contents Contents STL11N3LLH6 1 Electrical ratings ...................................................................