50DN6F7

STL50DN6F7 Dual N-channel 60 V, 9 mΩ typ., 57 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL50DN6F7 VDS 60 V RDS(on) max. 11 mΩ ID 57 A  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL50DN6F7 Marking 50DN6F7 Table 1: Device summary Package PowerFLAT™ 5x6 double island Packaging Tape and reel November 2015 DocID028132 Rev 2 This is information on a product in full production. 1/15 www.st.com Contents Contents STL50DN6F7 1 Electrical ratings ...