40N10F7 MOSFET Datasheet

40N10F7 Datasheet, PDF, Equivalent


Part Number

40N10F7

Description

N-channel Power MOSFET

Manufacture

STMicroelectronics

Total Page 15 Pages
Datasheet
Download 40N10F7 Datasheet


40N10F7
STL40N10F7
N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STL40N10F7
VDS
100 V
RDS(on) max.
0.024Ω
ID
10 A
PTOT
5W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STL40N10F7
Table 1: Device summary
Marking
Package
40N10F7
PowerFLATTM 5x6
Packing
Tape and reel
February 2016
DocID024671 Rev 4
This is information on a product in full production.
1/15
www.st.com

40N10F7
Contents
Contents
STL40N10F7
1 Electrical ratings............................................................................... 3
2 Electrical characteristics ................................................................. 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ...................................................................................... 8
4 Package information ........................................................................ 9
4.1 PowerFLAT 5x6 type R package information .................................. 10
4.2 Packing information......................................................................... 12
5 Revision history.............................................................................. 14
2/15 DocID024671 Rev 4


Features STL40N10F7 N-channel 100 V, 0.02 Ω typ ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal sch ematic diagram Features Order code ST L40N10F7 VDS 100 V RDS(on) max. 0.024 Ω ID 10 A PTOT 5W  Among the low est RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Cis s ratio for EMI immunity  High avala nche ruggedness Applications  Switch ing applications Description This N-cha nnel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench g ate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge f or faster and more efficient switching. Order code STL40N10F7 Table 1: Devic e summary Marking Package 40N10F7 P owerFLATTM 5x6 Packing Tape and reel February 2016 DocID024671 Rev 4 This is information on a product in full pro duction. 1/15 www.st.com Contents Con tents STL40N10F7 1 Electrical ratings.........................
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