GF10HF60KD

STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction )susceptibility) t(s■ Tight parameter distribution uc■ Ultrafast soft-recovery antiparallel diode d■ Short-circuit rugged ProApplications lete■ Motor drives o■ High frequency inverters bs■ SMPS and PFC in both hard switch and Oresonant topologies t(s) -Description cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applications operating at high Obsolefrequencies. 3 2 1 TO-220FP TAB 3 2 1 TO-220 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10HF60KDT4 GB10HF60K...