G10M65DF2 Datasheet: Trench gate field-stop IGBT





G10M65DF2 Trench gate field-stop IGBT Datasheet

Part Number G10M65DF2
Description Trench gate field-stop IGBT
Manufacture STMicroelectronics
Total Page 19 Pages
PDF Download Download G10M65DF2 Datasheet PDF

Features: STGB10M65DF2 Trench gate field-stop IGB T, M series 650 V, 10 A low-loss in D² PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal s chematic diagram Features  6 µs of short-circuit withstand time  VCE(s at) = 1.55 V (typ.) @ IC = 10 A  Tig ht parameter distribution  Safer par alleling  Positive VCE(sat) temperat ure coefficient  Low thermal resista nce  Soft and very fast recovery ant iparallel diode  Maximum junction te mperature: TJ = 175 °C Applications Motor control  UPS  PFC  Gen eral purpose inverter Order code STGB1 0M65DF2 Description This device is an IGBT developed using an advanced propri etary trench gate field-stop structure. The device is part of the M series IGB Ts, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-ci rcuit functionality are essential. Furt hermore, the positive VCE(sat) temperat ure coefficient and tight parameter distribution result in safe.

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STGB10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A
low-loss in D²PAK package
Datasheet - production data
TAB
2
3
1
D²PAK
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
Motor control
UPS
PFC
General purpose inverter
Order code
STGB10M65DF2
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Table 1: Device summary
Marking
Package
Packing
G10M65DF2
D²PAK
Tape and reel
April 2017
DocID027429 Rev 6
This is information on a product in full production.
1/19
www.st.com

                    
                    






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