Document
STGB10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package
Datasheet - production data
TAB
2 3
1
D²PAK
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C
Applications
Motor control UPS PFC General purpose inverter
Order code STGB10M65DF2
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safe.