N-channel Power MOSFET
STL19N3LLH6AG
Datasheet
Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 ...
Description
STL19N3LLH6AG
Datasheet
Automotive-grade N-channel 30 V, 23 mΩ typ., 10 A, STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package
4 3 2 1
PowerFLAT™ 5x6
D(5, 6, 7, 8)
8 76 5
Features
Order code
VDS
STL19N3LLH6AG
30 V
AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic level Wettable flank package
RDS(on) max. 33 mΩ
ID 10 A
PTOT 50 W
G(4) Applications
Switching applications
S(1, 2, 3)
12 34 Top View
NG4D5678S123
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STL19N3LLH6AG
Product summary
Order code
STL19N3LLH6AG
Marking
19N3LLH6
Package
PowerFLAT 5x6
Packing
Tape and reel
DS12507 - Rev 1 - April 2018 For further information contact your local STMicroelectronics sales office.
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