G15M65DF2

STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features  6 μs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 15 A  Tight parameter distribution  Safer paralleling  Positive VCE(sat) temperature coefficient  Low thermal resistance  Soft and very fast recovery antiparallel diode  Maximum junction temperature: TJ = 175 °C Applications  Motor control  UPS  PFC  General purpose inverter Order code STGB15M65DF2 Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in sa...