GB20V60DF

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB 3 2 1 TO-220 3 1 D²PAK TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram Features Maximum junction temperature: TJ = 175 °C Very high speed switching series Tail-less switching off Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Lead free package Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of ver...